Multidisciplinary Digital Publishing Institute
Non-volatile memories (NVMs) offer superior density and energy characteristics compared to the conventional memories; however, NVMs suffer from severe reliability issues that can easily eclipse their energy efficiency advantages. In this paper, we survey architectural techniques for improving the soft-error reliability of NVMs, specifically PCM (phase change
memory) and STT-RAM (spin transfer torque RAM). We focus on soft-errors, such as resistance drift and write disturbance, in PCM and read disturbance and write failures in ...